Apparatus and method for processing a substrate

ABSTRACT

A method for processing a substrate is provided which includes applying fluid onto a surface of the substrate from a portion of a plurality of inlets and removing at least the fluid from the surface of the substrate where the removing being processed as the fluid is applied to the surface. The applying the fluid and the removing the fluid forms a segment of a fluid meniscus on the surface of the substrate.

CROSS REFERENCE To RELATED APPLICATION

This is a continuation-in-part of co-pending U.S. patent applicationSer. No. 10/261,839 filed on Sep. 30, 2002 from which priority under 35U.S.C. § 120 is claimed and entitled “Method and Apparatus for DryingSemiconductor Wafer Surfaces Using a Plurality of Inlets and OutletsHeld in Close Proximity to the Wafer Surfaces.” The aforementionedpatent application is hereby incorporated by reference in its entirety.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to semiconductor wafer processing and,more particularly, to apparatuses and techniques for more efficientlyapplying and removing fluids from wafer surfaces while reducingcontamination and decreasing wafer processing costs.

2. Description of the Related Art

In the semiconductor chip fabrication process, it is well-known thatthere is a need to process a wafer using operations such as cleaning anddrying. In each of these types of operations, there is a need toeffectively apply and remove fluids for the wafer operation process.

For example, wafer cleaning may have to be conducted where a fabricationoperation has been performed that leaves unwanted residues on thesurfaces of wafers. Examples of such a fabrication operation includeplasma etching (e.g., tungsten etch back (WEB)) and chemical mechanicalpolishing (CMP). In CMP, a wafer is placed in a holder which pushes awafer surface against a rolling conveyor belt. This conveyor belt uses aslurry which consists of chemicals and abrasive materials to cause thepolishing. Unfortunately, this process tends to leave an accumulation ofslurry particles and residues at the wafer surface. If left on thewafer, the unwanted residual material and particles may cause, amongother things, defects such as scratches on the wafer surface andinappropriate interactions between metallization features. In somecases, such defects may cause devices on the wafer to become inoperable.In order to avoid the undue costs of discarding wafers having inoperabledevices, it is therefore necessary to clean the wafer adequately yetefficiently after fabrication operations that leave unwanted residues.

After a wafer has been wet cleaned, the wafer must be dried effectivelyto prevent water or cleaning fluid remnants from leaving residues on thewafer. If the cleaning fluid on the wafer surface is allowed toevaporate, as usually happens when droplets form, residues orcontaminants previously dissolved in the cleaning fluid will remain onthe wafer surface after evaporation (e.g., and form water spots). Toprevent evaporation from taking place, the cleaning fluid must beremoved as quickly as possible without the formation of droplets on thewafer surface. In an attempt to accomplish this, one of severaldifferent drying techniques are employed such as spin drying, IPA, orMarangoni drying. All of these drying techniques utilize some form of amoving liquid/gas interface on a wafer surface which, if properlymaintained, results in drying of a wafer surface without the formationof droplets. Unfortunately, if the moving liquid/gas interface breaksdown, as often happens with all of the aforementioned drying methods,droplets form and evaporation occurs resulting in contaminants beingleft on the wafer surface. The most prevalent drying technique usedtoday is spin rinse drying (SRD).

FIG. 1A illustrates movement of fluids on a wafer 10 during an SRDprocess. In this drying process, a wet wafer is rotated at a high rateby rotation 14. In SRD, by use of centrifugal force, the fluid used torinse the wafer is pulled from the center of the wafer to the outside ofthe wafer and finally off of the wafer as shown by fluid directionalarrows 16. As the fluid is being pulled off of the wafer, a movingliquid/gas interface 12 is created at the center of the wafer and movesto the outside of the wafer (i.e., the circle produced by the movingliquid/gas interface 12 gets larger) as the drying process progresses.In the example of FIG. 1A, the inside area of the circle formed by themoving liquid/gas interface 12 is free from the fluid and the outsidearea of the circle formed by the moving liquid/gas interface 12 is thefluid. Therefore, as the drying process continues, the section inside(the dry area) of the moving liquid/gas interface 12 increases while thearea (the wet area) outside of the moving liquid/gas interface 12decreases. As stated previously, if the moving liquid/gas interface 12breaks down, droplets of the fluid form on the wafer and contaminationmay occur due to evaporation of the droplets. As such, it is imperativethat droplet formation and the subsequent evaporation be limited to keepcontaminants off of the wafer surface. Unfortunately, the present dryingmethods are only partially successful at the prevention of moving liquidinterface breakdown.

In addition, the SRD process has difficulties with drying wafer surfacesthat are hydrophobic. Hydrophobic wafer surfaces can be difficult to drybecause such surfaces repel water and water based (aqueous) cleaningsolutions. Therefore, as the drying process continues and the cleaningfluid is pulled away from the wafer surface, the remaining cleaningfluid (if aqueous based) will be repelled by the wafer surface. As aresult, the aqueous cleaning fluid will want the least amount of area tobe in contact with the hydrophobic wafer surface. Additionally, theaqueous cleaning solution tends cling to itself as a result of surfacetension (i.e., as a result of molecular hydrogen bonding). Therefore,because of the hydrophobic interactions and the surface tension, balls(or droplets) of aqueous cleaning fluid forms in an uncontrolled manneron the hydrophobic wafer surface. This formation of droplets results inthe harmful evaporation and the contamination discussed previously. Thelimitations of the SRD are particularly severe at the center of thewafer, where centrifugal force acting on the droplets is the smallest.Consequently, although the SRD process is presently the most common wayof wafer drying, this method can have difficulties reducing formation ofcleaning fluid droplets on the wafer surface especially when used onhydrophobic wafer surfaces. Certain portion of the wafer may havedifferent hydrophobic properties.

FIG. 1B illustrates an exemplary wafer drying process 18. In thisexample a portion 20 of the wafer 10 has a hydrophilic area and aportion 22 has a hydrophobic area. The portion 20 attracts water so afluid 26 pools in that area. The portion 22 is hydrophobic so that arearepels water and therefore there can be a thinner film of water on thatportion of the wafer 10. Therefore, the hydrophobic portions of thewafer 10 often dry more quickly than the hydrophilic portions. This maylead to inconsistent wafer drying that can increase contamination levelsand therefore decrease wafer production yields.

Therefore, there is a need for a method and an apparatus that avoids theprior art by enabling optimized fluid management and application to awafer that reduces contaminating deposits on the wafer surface. Suchdeposits as often occurs today reduce the yield of acceptable wafers andincrease the cost of manufacturing semiconductor wafers.

SUMMARY OF THE INVENTION

Broadly speaking, the present invention fills these needs by providing asubstrate processing apparatus that is capable of processing wafersurfaces while significantly reducing wafer contamination. It should beappreciated that the present invention can be implemented in numerousways, including as a process, an apparatus, a system, a device or amethod. Several inventive embodiments of the present invention aredescribed below.

In one embodiment, a method for processing a substrate is provided whichincludes applying fluid onto a surface of the substrate from a portionof a plurality of inlets and removing at least the fluid from thesurface of the substrate where the removing being processed as the fluidis applied to the surface. The applying the fluid and the removing thefluid forms a segment of a fluid meniscus on the surface of thesubstrate.

In another embodiment, an apparatus for processing a substrate isprovided which includes a proximity head having a plurality of conduitsand a fluid input coupled to the proximity head and supplies fluid to acorresponding one of a plurality of conduits where the corresponding oneof the plurality of conduits uses the fluid to generate a segment of afluid meniscus on a surface of the substrate. The apparatus alsoincludes a fluid flow control mechanism for managing fluid flow throughthe fluid input.

In yet another embodiment, a system for processing a substrate isprovided which includes a proximity head configured to generate at leastone segment of a fluid meniscus and a fluid input coupled to theproximity head, the fluid input configured to provide fluid to theproximity head. The system also includes a fluid supply coupled to thefluid input where the fluid supply supplies the fluid to the fluidinput.

The advantages of the present invention are numerous. Most notably, theapparatuses and methods described herein utilize a method and apparatusto intelligently and powerfully manage meniscus size and shape toefficiently process (e.g., clean, dry, etc.) substrates. Therefore, theoperations can utilize optimal management of fluid application andremoval from the substrate while reducing unwanted fluids andcontaminants remaining on a wafer surface. Consequently, waferprocessing and production may be increased and higher wafer yields maybe achieved due to efficient wafer processing.

The present invention enables optimal wafer processing through thepowerful and intelligent management of fluid input into each of thesource inlets of the proximity head. By managing each input or series ofinputs, fluid being applied from each source inlet to the wafer surfacemay be controlled in an intelligent manner. By controlling the fluidapplied from the each of the source inlets, the size and shape of themeniscus may be adjusted depending on the wafer processing operationdesired. In one embodiment, the flow through each of the inputssupplying the source inlets may be adjusted by use of a flow controldevice. In additional embodiments, any suitable number of menisci may beconcentric to and/or surround each other.

Other aspects and advantages of the present invention will becomeapparent from the following detailed description, taken in conjunctionwith the accompanying drawings, illustrating by way of example theprinciples of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention will be readily understood by the followingdetailed description in conjunction with the accompanying drawings. Tofacilitate this description, like reference numerals designate likestructural elements.

FIG. 1A illustrates movement of cleaning fluids on a wafer during an SRDdrying process.

FIG. 1B illustrates an exemplary wafer drying process.

FIG. 2 shows a wafer processing system in accordance with one embodimentof the present invention.

FIG. 3 illustrates a proximity head performing a wafer processingoperation in accordance with one embodiment of the present invention.

FIG. 4A illustrates a wafer processing operation that may be conductedby a proximity head in accordance with one embodiment of the presentinvention.

FIG. 4B illustrates a side view of exemplary proximity heads for use ina dual wafer surface processing system in accordance with one embodimentof the present invention.

FIG. 5A shows a multi-menisci proximity head in accordance with oneembodiment of the present invention.

FIG. 5B shows a cross section view of the multi-menisci proximity headin accordance with one embodiment of the present invention.

FIG. 6A illustrates a multi-menisci proximity head in accordance withone embodiment of the present invention.

FIG. 6B illustrates the processing surface of the proximity head inaccordance with one embodiment of the present invention.

FIG. 6C shows a closer view of the processing surface of themulti-meniscus proximity head in accordance with one embodiment of thepresent invention.

FIG. 6D shows the facilities plate attaching to the body to form themulti-menisci proximity head in accordance with one embodiment of thepresent invention.

FIG. 6E illustrates a cross section view of the proximity head inaccordance with one embodiment of the present invention.

FIG. 7 illustrates a cross-sectional view of the multi-menisci proximityhead in exemplary wafer processing operations in accordance with oneembodiment of the present invention.

FIG. 8 illustrates a multi-menisci proximity head that includesrectangular shaped menisci in accordance with one embodiment of thepresent invention.

FIG. 9 shows a multi-menisci proximity head with oblong fluid menisci inaccordance with one embodiment of the present invention.

FIG. 10A illustrates a side view of a proximity head with fluid inputsin accordance with one embodiment of the present invention.

FIG. 10B shows a face view of a processing region of the proximity headin accordance with one embodiment of the present invention.

FIG. 10C illustrates the proximity head showing regions with theconduits that form segments of the meniscus formed by the proximity headduring operation in accordance with one embodiment of the presentinvention.

FIG. 10D shows a macroscopic view of a wafer processing system inaccordance with one embodiment of the present invention.

FIG. 11A shows a proximity head being supplied with fluid from theplurality of fluid inputs in accordance with one embodiment of thepresent invention.

FIG. 11B shows a fluid meniscus that has been formed on the wafer by theproximity head of FIG. 11A in accordance with one embodiment of thepresent invention.

FIG. 11C shows the proximity head in operation where a portion of theplurality of variable flow fluid inputs are turned on in accordance withone embodiment of the present invention.

FIG. 11D illustrates the meniscus that is formed by the proximity headwith the configuration of the variable flow fluid inputs as shown inFIG. 11C in accordance with one embodiment of the present invention.

FIG. 11E illustrates the proximity head as discussed in FIG. 11D inoperation where the region shows fluid inputs which have theirrespective fluid flow control devices turned off and the region showsfluid input which have their respective fluid flow control devicesturned on in accordance with one embodiment of the present invention.

FIG. 11F shows the proximity head in operation illustrating thegeneration of another exemplary meniscus in accordance with oneembodiment of the present invention.

FIG. 11G illustrates the proximity head where no meniscus is formed inaccordance with one embodiment of the present invention.

FIG. 11H shows a fluid meniscus that has been formed on the wafer inaccordance with one embodiment of the present invention.

FIG. 12A shows a proximity head producing multiple types of menisci inaccordance with one embodiment of the present invention.

FIG. 12B shows a proximity head where more of the fluid flow controldevices 404′ allows the second fluid to flow instead of the first fluidin accordance with one embodiment of the present invention.

FIG. 13A shows a top view of a multi-menisci proximity head inaccordance with one embodiment of the present invention.

FIG. 13B shows a side view of the dual proximity heads that areprocessing a top surface and a bottom surface of the wafer in accordancewith one embodiment of the present invention.

FIG. 13C shows the viewpoint of a side view of a width of the proximityhead as shown in FIG. 13A in accordance with one embodiment of thepresent invention.

FIG. 14A shows a proximity head that is capable of generating asubstantially circular fluid meniscus in accordance with one embodimentof the present invention.

FIG. 14B shows a side perspective view along a radius of the circularregions in the proximity head operating on an underside of the wafer inaccordance with one embodiment of the present invention.

FIG. 14C illustrates an analogous structure as shown in FIG. 14B that isin position to process a top surface of the wafer 108 in accordance withone embodiment of the present invention.

FIG. 15 illustrates management of concentric fluid menisci in accordancewith one embodiment of the present invention.

DETAILED DESCRIPTION

An invention for methods and apparatuses for processing a substrate isdisclosed. In the following description, numerous specific details areset forth in order to provide a thorough understanding of the presentinvention. It will be understood, however, by one of ordinary skill inthe art, that the present invention may be practiced without some or allof these specific details. In other instances, well known processoperations have not been described in detail in order not tounnecessarily obscure the present invention.

While this invention has been described in terms of several preferableembodiments, it will be appreciated that those skilled in the art uponreading the preceding specifications and studying the drawings willrealize various alterations, additions, permutations and equivalentsthereof. It is therefore intended that the present invention includesall such alterations, additions, permutations, and equivalents as fallwithin the true spirit and scope of the invention.

The figures below illustrate embodiments of an exemplary waferprocessing system using proximity heads with variable flow inputs intothe source inlets to generate one or more of a specific shape, size, andlocation of fluid menisci. In another embodiment, both fluid input intosource inlets and fluid output from source outlets may be managed. Thistechnology may be utilized to perform any suitable type of combinationof types of wafer operation(s) such as, for example drying, etching,plating, etc. It should be appreciated that the systems and proximityheads as described herein are exemplary in nature, and that any othersuitable types of configurations that would enable the generation andmovement of two or more menisci that are in contact as described hereinmay be utilized.

In the embodiments shown, the proximity head(s) may move or staystationary depending on the embodiment utilized. In one embodiment, theproximity head(s) may stay stationary and by controlling the fluidapplied to the wafer from the source inlets, segments of the fluidmeniscus may be either generated or removed. Therefore, depending on theproximity head size and wafer size, movement of the proximity head(s)for wafer processing may not be necessary. In another embodiment, theproximity head(s) may stay stationary but the wafer may be moved. In yetanother embodiment, the proximity head(s) may move in a linear fashionfrom a center portion of the wafer to the edge of the wafer. It shouldbe appreciated that other embodiments may be utilized where theproximity head(s) move in a linear fashion from one edge of the wafer toanother diametrically opposite edge of the wafer, or other non-linearmovements may be utilized such as, for example, in a radial motion, in acircular motion, in a spiral motion, in a zig-zag motion, in a randommotion, etc. In addition, the motion may also be any suitable specifiedmotion profile as desired by a user. In addition, in one embodiment, thewafer may be rotated and the proximity head moved in a linear fashion sothe proximity head may process all portions of the wafer. It should alsobe understood that other embodiments may be utilized where the wafer isnot rotated but the proximity head is configured to move over the waferin a fashion that enables processing of all portions of the wafer.

In addition, the proximity head and the wafer processing system asdescribed herein may be utilized to process any shape and size ofsubstrates such as for example, 200 mm wafers, 300 mm wafers, flatpanels, etc. Moreover, the size of the proximity head and in turn thesizes of the menisci may vary. In one embodiment, the size of theproximity head and the sizes of the menisci may be larger than a waferbeing processed. In such an embodiment, by generating and shutting offcertain segments of the meniscus, a part of or all of the wafer may beprocessed by the meniscus. In another embodiment, the proximity head andthe sizes of the menisci may be smaller than the wafer being processed.Furthermore, the menisci as discussed herein may be utilized with otherforms of wafer processing technologies such as, for example, brushing,lithography, megasonics, etc.

A fluid meniscus can be generated, supported, and moved (e.g., onto, offof and across a wafer) with a proximity head. Various proximity headsand methods of using the proximity heads are described in co-owned U.S.patent application Ser. No. 10/834,548 filed on Apr. 28, 2004 andentitled “Apparatus and Method for Providing a Confined Liquid forImmersion Lithography,” which is a continuation in part of U.S. patentapplication Ser. No. 10/606,022, filed on Jun. 24, 2003 and entitled“System And Method For Integrating In-Situ Metrology Within A WaferProcess” which is a continuation-in-part of U.S. patent application Ser.No. 10/330,843 filed on Dec. 24, 2002 and entitled “Meniscus, Vacuum,IPA Vapor, Drying Manifold,” which is a continuation-in-part of U.S.patent application Ser. No. 10/261,839 filed on Sep. 30, 2002 andentitled “Method and Apparatus for Drying Semiconductor Wafer SurfacesUsing a Plurality of Inlets and Outlets Held in Close Proximity to theWafer Surfaces,” both of which are incorporated herein by reference inits entirety. Additional embodiments and uses of the proximity head arealso disclosed in U.S. patent application Ser. No. 10/330,897, filed onDec. 24, 2002, entitled “System for Substrate Processing with Meniscus,Vacuum, IPA vapor, Drying Manifold” and U.S. patent application Ser. No.10/404,692, filed on Mar. 31, 2003, entitled “Methods and Systems forProcessing a Substrate Using a Dynamic Liquid Meniscus.” Stilladditional embodiments of the proximity head are described in U.S.patent application Ser. No. 10/404,270, filed on Mar. 31, 2003, entitled“Vertical Proximity Processor,” U.S. patent application Ser. No.10/603,427, filed on Jun. 24, 2003, and entitled “Methods and Systemsfor Processing a Bevel Edge of a Substrate Using a Dynamic LiquidMeniscus,” U.S. patent application Ser. No. 10/606,022, filed on Jun.24, 2003, and entitled “System and Method for Integrating In-SituMetrology within a Wafer Process,” U.S. patent application Ser. No.10/607,611 filed on Jun. 27, 2003 entitled “Apparatus and Method forDepositing and Planarizing Thin Films of Semiconductor Wafers,” U.S.patent application Ser. No. 10/611,140 filed on Jun. 30, 2003 entitled“Method and Apparatus for Cleaning a Substrate Using Megasonic Power,”U.S. patent application Ser. No. 10/817,398 filed on Apr. 1, 2004entitled “Controls of Ambient Environment During Wafer Drying UsingProximity Head,” U.S. patent application Ser. No. 10/817,355 filed onApr. 1, 2004 entitled “Substrate Proximity Processing Structures andMethods for Using and Making the Same,” U.S. patent application Ser. No.10/817,620 filed on Apr. 1, 2004 entitled “Substrate Meniscus Interfaceand Methods for Operation,” U.S. patent application Ser. No. 10/817,133filed on Apr. 1, 2004 entitled “Proximity Meniscus Manifold,” U.S. Pat.No. 6,488,040, issued on Dec. 3, 2002, entitled “Capillary ProximityHeads For Single Wafer Cleaning And Drying,” U.S. Pat. No. 6,616,772,issued on Sep. 9, 2003, entitled “Methods For Wafer Proximity CleaningAnd Drying,” and U.S. patent application Ser. No. 10/742,303 entitled“Proximity Brush Unit Apparatus and Method.” Additional embodiments anduses of the proximity head are further described in U.S. patentapplication Ser. No. 10/883,301 entitled “Concentric ProximityProcessing Head,” and U.S. patent application Ser. No. 10/882,835entitled “Method and Apparatus for Processing Wafer Surfaces Using Thin,High Velocity Fluid Layer.” The aforementioned patent applications arehereby incorporated by reference in their entirety.

It should be appreciated that the system described herein is justexemplary in nature, and the proximity head described herein may be usedin any suitable system such as, for example, those described in the U.S.patent applications referenced above. It should also be appreciated thatFIGS. 2 through 4B describe formation of a single meniscus and thereforeprocess variables (e.g. flow rates, dimensions, etc.) described thereinmay be different than the process variables described for amulti-menisci proximity head as described in FIG. 5A through 9 or theprocess variables for generating segments of menisci as described inFIGS. 10 through 15. Regardless, it should be understood that controland management of fluid flow into the proximity head may be managed inany suitable type of proximity head configured to generate any suitabletype of fluid meniscus.

FIG. 2 shows a wafer processing system 100 in accordance with oneembodiment of the present invention. The system 100 includes rollers 102a and 102 b which may hold and/or rotate a wafer to enable wafersurfaces to be processed. The system 100 also includes proximity heads106 a and 106 b that, in one embodiment, are attached to an upper arm104 a and to a lower arm 104 b respectively. In one embodiment, theproximity heads 106 a and/or 106 b may be any suitable proximity head asdescribed in further detail herein. The proximity heads 106 a and 106 bmay generate a single meniscus or may generate multiple menisci.Therefore, the proximity heads 106 a and 106 b, in one embodiment, maybe a single meniscus proximity head or a multi-menisci proximity head ora combination of both where one of the proximity heads 106 a and 106 bis a single meniscus proximity head and the other is a multi-menisciproximity head. As described herein the term “multi-menisci proximityhead” is a proximity head capable of generating one or more fluidmenisci. In a one embodiment of a multi-menisci proximity head, a firstfluid meniscus is substantially surrounded by a second fluid meniscusand in another embodiment, the first fluid meniscus is located alongsidethe second fluid meniscus. The proximity head may be any suitableapparatus that may generate a fluid meniscus as described herein anddescribed in the patent application incorporated by reference above. Theupper arm 104 a and the lower arm 104 b can be part of an assembly whichenables substantially linear movement (or in another embodiment a slightarc-like movement) of the proximity heads 106 a and 106 b along a radiusof the wafer. In yet another embodiment, the assembly may move theproximity heads 106 a and 106 b in any suitable user defined movement.

In one embodiment the arms 104 are configured to hold the proximity head106 a above the wafer and the proximity head 106 b below the wafer inclose proximity to the wafer. For example, in one exemplary embodimentthis may be accomplished by having the upper arm 104 a and the lower arm104 b be movable in a vertical manner so once the proximity heads aremoved horizontally into a location to start wafer processing, theproximity heads 106 a and 106 b can be moved vertically to a position inclose proximity to the wafer. In another embodiment, the upper arm 104 aand the lower arm 104 b may be configured to start the proximity heads106 a and 106 b in a position where the menisci are generated beforeprocessing and the menisci that has already been generated between theproximity heads 106 a and 106 may be moved onto the wafer surface to beprocessed from an edge area of a wafer 108. Therefore, the upper arm 104a and the lower arm 104 b may be configured in any suitable way so theproximity heads 106 a and 106 b can be moved to enable wafer processingas described herein. It should also be appreciated that the system 100may be configured in any suitable manner as long as the proximityhead(s) may be moved in close proximity to the wafer to generate andcontrol one or more menisci that, in one embodiment, are concentric witheach other. It should also be understood that close proximity may be anysuitable distance from the wafer as long as a menisci may be maintained.In one embodiment, the proximity heads 106 a and 106 b (as well as anyother proximity head described herein) may each be located between about0.1 mm to about 10 mm from the wafer to generate the fluid menisci onthe wafer surface. In a preferable embodiment, the proximity heads 106 aand 106 b (as well as any other proximity head described herein) mayeach be located bout 0.5 mm to about 2.0 mm from the wafer to generatethe fluid menisci on the wafer surface, and in more preferableembodiment, the proximity heads 106 a and 106 b (as well as any otherproximity head described herein) may be located about 1.5 mm from thewafer to generate the fluid menisci on the wafer surface.

In one embodiment, the system 100, the arms 104 are configured to enablethe proximity heads 106 a and 106 b to be moved from processed tounprocessed portions of the wafer. It should be appreciated that thearms 104 may be movable in any suitable manner that would enablemovement of the proximity heads 106 a and 106 b to process the wafer asdesired. In one embodiment, the arms 104 may be motivated by a motor tomove the proximity head 106 a and 106 b along the surface of the wafer.It should be understood that although the wafer processing system 100 isshown with the proximity heads 106 a and 106 b, that any suitable numberof proximity heads may be utilized such as, for example, 1, 2, 3, 4, 5,6, etc. The proximity heads 106 a and/or 106 b of the wafer processingsystem 100 may also be any suitable size or shape as shown by, forexample, any of the proximity heads as described herein. The differentconfigurations described herein generate the fluid menisci between theproximity head and the wafer. The fluid menisci may be moved across thewafer to process the wafer by applying fluid to the wafer surface andremoving fluids from the surface. In such a way, depending on the fluidsapplied to the wafer, cleaning, drying, etching, and/or plating may beaccomplished. In addition, the first fluid meniscus may conduct one typeof operation and the second fluid meniscus that at least partiallysurrounds the first fluid meniscus may conduct the same operation or adifferent wafer processing operation as the first fluid meniscus.Therefore, the proximity heads 106 a and 106 b can have any numeroustypes of configurations as shown herein or other configurations thatenable the processes described herein. It should also be appreciatedthat the system 100 may process one surface of the wafer or both the topsurface and the bottom surface of the wafer.

In addition, besides processing the top and/or bottom surfaces of thewafer, the system 100 may also be configured to process one side of thewafer with one type of process (e.g., etching, cleaning, drying,plating, etc.) and process the other side of the wafer using the sameprocess or a different type of process by inputting and outputtingdifferent types of fluids or by using a different configuration menisci.The proximity heads can also be configured to process the bevel edge ofthe wafer in addition to processing the top and/or bottom of the wafer.This can be accomplished by moving the menisci off (or onto) the edgethe wafer which processes the bevel edge. It should also be understoodthat the proximity heads 106 a and 106 b may be the same type ofapparatus or different types of proximity heads.

The wafer 108 may be held and rotated by the rollers 102 a and 102 b inany suitable orientation as long as the orientation enables a desiredproximity head to be in close proximity to a portion of the wafer 108that is to be processed. In one embodiment, the rollers 102 a and 102 bcan rotate in a clockwise direction to rotate the wafer 108 in acounterclockwise direction. It should be understood that the rollers maybe rotated in either a clockwise or a counterclockwise directiondepending on the wafer rotation desired. In one embodiment, the rotationimparted on the wafer 108 by the rollers 102 a and 102 b serves to movea wafer area that has not been processed into close proximity to theproximity heads 106 a and 106 b. However, the rotation itself does notdry the wafer or move fluid on the wafer surfaces towards the edge ofthe wafer. Therefore, in an exemplary wafer processing operation, theunprocessed areas of the wafer would be presented to the proximity heads106 a and 106 b through both the linear motion of the proximity heads106 a and 106 b and through the rotation of the wafer 108. The waferprocessing operation itself may be conducted by at least one of theproximity heads. Consequently, in one embodiment, processed portions ofthe wafer 108 would expand from a center region to the edge region ofthe wafer 108 in a spiral movement as the processing operationprogresses. In another embodiment, when the proximity heads 106 a and106 b are moved from the periphery of the wafer 108 to the center of thewafer 108, the processed portions of the wafer 108 would expand from theedge region of the wafer 108 to the center region of the wafer 108 in aspiral movement.

In an exemplary processing operation, it should be understood that theproximity heads 106 a and 106 b may be configured to dry, clean, etch,and/or plate the wafer 108. In an exemplary drying embodiment, the atleast one of first inlet may be configured to input deionized water(DIW) (also known as a DIW inlet), the at least one of a second inletmay be configured to input N₂ carrier gas containing isopropyl alcohol(IPA) in vapor form (also known as IPA inlet), and the at least oneoutlet may be configured to remove fluids from a region between thewafer and a particular proximity head by applying vacuum (also known asvacuum outlet). It should be appreciated that although IPA vapor is usedin some of the exemplary embodiments, any other type of vapor may beutilized such as for example, nitrogen, any suitable alcohol vapor,organic compounds, volatile chemicals, etc. that may be miscible withwater.

In an exemplary cleaning embodiment, a cleaning solution may besubstituted for the DIW. An exemplary etching embodiment may beconducted where an etchant may be substituted for the DIW. In anadditional embodiment, plating may be accomplished as described infurther detail in reference to U.S. patent application Ser. No.10/607,611 filed on Jun. 27, 2003 entitled “Apparatus and Method forDepositing and Planarizing Thin Films of Semiconductor Wafers” which wasincorporated by reference above. In addition, other types of solutionsmay be inputted into the first inlet and the second inlet depending onthe processing operation desired.

It should be appreciated that the inlets and outlets located on a faceof the proximity head may be in any suitable configuration as long asstable menisci as described herein may be utilized. In one embodiment,the at least one N₂/IPA vapor inlet may be adjacent to the at least onevacuum outlet which is in turn adjacent to the at least one processingfluid inlet to form an IPA-vacuum-processing fluid orientation. Such aconfiguration can generate an outside meniscus that at least partiallysurrounds the inside meniscus. In addition, the inside meniscus may begenerated through a configuration with a processing fluid-vacuumorientation. Therefore, one exemplary embodiment where a second fluidmeniscus at least partially surrounds a first fluid meniscus may begenerated by an IPA-vacuum-second processing fluid-vacuum-firstprocessing fluid-vacuum-second processing fluid-vacuum-IPA orientationas described in further detail below. It should be appreciated thatother types of orientation combinations such as IPA-processingfluid-vacuum, processing fluid-vacuum-IPA, vacuum-IPA-processing fluid,etc. may be utilized depending on the wafer processes desired and whattype of wafer processing mechanism is sought to be enhanced. In oneembodiment, the IPA-vacuum-processing fluid orientation in the formdescribed herein may be utilized to intelligently and powerfullygenerate, control, and move the menisci located between a proximity headand a wafer to process wafers. The processing fluid inlets, the N₂/IPAvapor inlets, and the vacuum outlets may be arranged in any suitablemanner if the above orientation or any other suitable orientation thatcan generate a fluid meniscus is maintained. For example, in addition tothe N₂/PA vapor inlet, the vacuum outlet, and the processing fluidinlet, in an additional embodiment, there may be additional sets of IPAvapor outlets, processing fluid inlets and/or vacuum outlets dependingon the configuration of the proximity head desired. It should beappreciated that the exact configuration of the inlet and outletorientation may be varied depending on the application. For example, thedistance between the IPA input, vacuum, and processing fluid inletlocations may be varied so the distances are consistent or so thedistances are inconsistent. In addition, the distances between the IPAinput, vacuum, and processing fluid outlet may differ in magnitudedepending on the size, shape, and configuration of the proximity head106 a and the desired size of a process menisci (i.e., menisci shape andsize). In addition, exemplary IPA-vacuum-processing fluid orientationmay be found as described in the U.S. patent applications referencedabove.

In one embodiment, the proximity heads 106 a and 106 b may be positionedin close proximity to a top surface and a bottom surface respectively ofthe wafer 108 and may utilize the IPA (optionally) and processing fluidinlets and a vacuum outlets as described in further detail below togenerate wafer processing menisci in contact with the wafer 108 whichare capable of processing the top surface and the bottom surface of thewafer 108. The wafer processing menisci may be generated in a mannerconsistent with the descriptions in reference to Applications referencedand incorporated by reference above. At substantially the same time theIPA and the processing fluid is inputted, a vacuum may be applied inclose proximity to the wafer surface to remove the IPA vapor, theprocessing fluid, and/or the fluids that may be on the wafer surface. Itshould be appreciated that although IPA is utilized in the exemplaryembodiment, any other suitable type of vapor may be utilized such as forexample, nitrogen, any suitable alcohol vapor, organic compounds,hexanol, ethyl glycol, acetone, etc. that may be miscible with water.These fluids may also be known as surface tension changing (e.g.reducing) fluids. It should also be appreciated that depending on theconfiguration of the proximity head 106, the IPA inlets may not berequired and just the application of the processing fluid to the waferand removal of the processing fluid may generate a stable fluidmeniscus. The portion of the processing fluid that is in the regionbetween the proximity head and the wafer is the menisci. It should beappreciated that as used herein, the term “output” can refer to theremoval of fluid from a region between the wafer 108 and a particularproximity head, and the term “input” can be the introduction of fluid tothe region between the wafer 108 and the particular proximity head. Inanother embodiment, the proximity heads 106 a and 106 b may be scannedover the wafer 108 while being moved at the end of an arm that is beingmoved in a slight arc.

FIG. 3 illustrates a proximity head 106 performing a wafer processingoperation in accordance with one embodiment of the present invention.FIGS. 3 through 4B show a method of generating a basic fluid meniscuswhile FIGS. 5A through 15 discuss apparatuses and methods for generatinga more complex menisci configuration. FIGS. 10 through 15 showembodiments where inputs into the proximity head can vary fluid inputinto the source inlets of the proximity head. The proximity head 106, inone embodiment, moves while in close proximity to a top surface 108 a ofthe wafer 108 to conduct a wafer processing operation. It should beappreciated that the proximity head 106 may also be utilized to process(e.g., clean, dry, plate, etch, etc.) a bottom surface 108 b of thewafer 108. In one embodiment, the wafer 108 is rotating so the proximityhead 106 may be moved in a linear fashion along the head motion whilethe top surface 108 a is being processed. By applying the IPA 310through the inlet 302, the vacuum 312 through outlet 304, and theprocessing fluid 314 through the inlet 306, the meniscus 116 may begenerated. It should be appreciated that the orientation of theinlets/outlets as shown in FIG. 3 is only exemplary in nature, and thatany suitable inlets/outlets orientation that may produce a stable fluidmeniscus may be utilized such as those configurations as described inthe U.S. patent applications incorporated by reference previously.

FIG. 4A illustrates a wafer processing operation that may be conductedby a proximity head 106 a in accordance with one embodiment of thepresent invention. Although FIG. 4A shows a top surface 108 a beingprocessed, it should be appreciated that the wafer processing may beaccomplished in substantially the same way for the bottom surface 108 bof the wafer 108. In one embodiment, the inlet 302 may be utilized toapply isopropyl alcohol (IPA) vapor toward a top surface 108 a of thewafer 108, and the inlet 306 may be utilized to apply a processing fluidtoward the top surface 108 a of the wafer 108. In addition, the outlet304 may be utilized to apply vacuum to a region in close proximity tothe wafer surface to remove fluid or vapor that may located on or nearthe top surface 108 a. As described above, it should be appreciated thatany suitable combination of inlets and outlets may be utilized as longas the meniscus 116 may be formed. The IPA may be in any suitable formsuch as, for example, IPA vapor where IPA in vapor form is inputtedthrough use of a N₂ gas. Moreover, any suitable fluid used forprocessing the wafer (e.g., cleaning fluid, drying fluid, etching fluid,plating fluid, etc.) may be utilized that may enable or enhance thewafer processing. In one embodiment, an EPA inflow 310 is providedthrough the inlet 302, a vacuum 312 may be applied through the outlet304 and processing fluid inflow 314 may be provided through the inlet306. Consequently, if a fluid film resides on the wafer 108, a firstfluid pressure may be applied to the wafer surface by the IPA inflow310, a second fluid pressure may be applied to the wafer surface by theprocessing fluid inflow 314, and a third fluid pressure may be appliedby the vacuum 312 to remove the processing fluid, IPA and the fluid filmon the wafer surface.

Therefore, in one embodiment of a wafer processing, as the processingfluid inflow 314 and the IPA inflow 310 is applied toward a wafersurface, fluid (if any) on the wafer surface is intermixed with theprocessing inflow 314. At this time, the processing fluid inflow 314that is applied toward the wafer surface encounters the IPA inflow 310.The IPA forms an interface 118 (also known as an IPA/processing fluidinterface 118) with the processing fluid inflow 314 and along with thevacuum 312 assists in the removal of the processing fluid inflow 314along with any other fluid from the surface of the wafer 108. In oneembodiment, the IPA/processing fluid interface 118 reduces the surfaceof tension of the processing fluid. In operation, the processing fluidis applied toward the wafer surface and almost immediately removed alongwith fluid on the wafer surface by the vacuum applied by the outlet 304.The processing that is applied toward the wafer surface and for a momentresides in the region between a proximity head and the wafer surfacealong with any fluid on the wafer surface forms a meniscus 116 where theborders of the meniscus 116 are the IPA/processing fluid interfaces 118.Therefore, the meniscus 116 is a constant flow of fluid being appliedtoward the surface and being removed at substantially the same time withany fluid on the wafer surface. The nearly immediate removal of theprocessing fluid from the wafer surface prevents the formation of fluiddroplets on the region of the wafer surface being dried thereby reducingthe possibility of contamination on the wafer 108 after the processingfluid has accomplished its purpose depending on the operation (e.g.,etching, cleaning, drying, plating, etc.). The pressure (which is causedby the flow rate of the IPA) of the downward injection of IPA also helpscontain the meniscus 116. It should be understood that the in someconfigurations, IPA or surface tension reducing fluids is onlyoptionally applied and embodiments without IPA application may beutilized.

In one embodiment, the flow rate of the N2 carrier gas containing theIPA may assist in causing a shift or a push of processing fluid flow outof the region between the proximity head and the wafer surface and intothe outlets 304 (vacuum outlets) through which the fluids may beoutputted from the proximity head. It is noted that the push ofprocessing fluid flow is not a process requirement but can be used tooptimize meniscus boundary control. Therefore, as the IPA and theprocessing fluid are pulled into the outlets 304, the boundary making upthe IPA/processing fluid interface 118 is not a continuous boundarybecause gas (e.g., air) is being pulled into the outlets 304 along withthe fluids. In one embodiment, as the vacuum from the outlets 304 pullsthe processing fluid, IPA, and the fluid on the wafer surface, the flowinto the outlets 304 is discontinuous. This flow discontinuity isanalogous to fluid and gas being pulled up through a straw when a vacuumis exerted on combination of fluid and gas. Consequently, as theproximity head 106 a moves, the meniscus moves along with the proximityhead, and the region previously occupied by the meniscus has been drieddue to the movement of the IPA/processing fluid interface 118. It shouldalso be understood that the any suitable number of inlets 302(optional), outlets 304 and inlets 306 may be utilized depending on theconfiguration of the apparatus and the meniscus size and shape desired.In another embodiment, the liquid flow rates and the vacuum flow ratesare such that the total liquid flow into the vacuum outlet iscontinuous, so no gas flows into the vacuum outlet.

It should be appreciated any suitable flow rate may be utilized for theN₂/IPA, processing fluid, and vacuum as long as the meniscus 116 can bemaintained. In one embodiment, the flow rate of the processing fluidthrough a set of the inlets 306 is between about 25 ml per minute toabout 3,000 ml per minute. In a preferable embodiment, the flow rate ofthe processing fluid through the set of the inlets 306 is about 800 mlper minute. It should be understood that the flow rate of fluids mayvary depending on the size of the proximity head. In one embodiment alarger head may have a greater rate of fluid flow than smaller proximityheads. This may occur because larger proximity heads, in one embodiment,have more inlets 302 and 306 and outlets 304.

In one embodiment, the flow rate of the N₂/IPA vapor through a set ofthe inlets 302 is between about 1 liter per minute (SLPM) to about 100SLPM. In a preferable embodiment, the IPA flow rate is between about 6and 20 SLPM.

In one embodiment, the flow rate for the vacuum through a set of theoutlets 304 is between about 10 standard cubic feet per hour (SCFH) toabout 1250 SCFH. In a preferable embodiment, the flow rate for a vacuumthough the set of the outlets 304 is about 350 SCFH. In an exemplaryembodiment, a flow meter may be utilized to measure the flow rate of theN₂/IPA, processing fluid, and the vacuum.

It should be appreciated that any suitable type of wafer processingoperation may be conducted using the meniscus depending on theprocessing fluid utilized. For example, a cleaning fluid such as, forexample, SC-1, SC-2, etc., may be used for the processing fluid togenerate wafer cleaning operation. In a similar fashion, differentfluids may be utilized and similar inlet and outlet configurations maybe utilized so the wafer processing meniscus may also etch and/or platethe wafer. In one embodiment, etching fluids such as, for example, HF,EKC proprietary solution, KOH etc., may be utilized to etch the wafer.In another embodiment, plating fluids such as, for example, Cu Sulfate,Au Chloride, Ag Sulfate, etc. in conjunction with electrical input maybe conducted.

FIG. 4B illustrates a side view of exemplary proximity heads 106 and 106b for use in a dual wafer surface processing system in accordance withone embodiment of the present invention. In this embodiment, by usage ofinlets 302 and 306 to input N₂/IPA and processing respectively alongwith the outlet 304 to provide a vacuum, the meniscus 116 may begenerated. In addition, on the side of the inlet 306 opposite that ofthe inlet 302, there may be a outlet 304 to remove processing fluid andto keep the meniscus 116 intact. As discussed above, in one embodiment,the inlets 302 and 306 may be utilized for IPA inflow 310 and processingfluid inflow 314 respectively while the outlet 304 may be utilized toapply vacuum 312. In addition, in yet more embodiments, the proximityheads 106 and 106 b may be of a configuration as shown in the U.S.patent applications referenced above. Any suitable surface coming intocontact with the meniscus 116 such as, for example, wafer surfaces 108 aand 108 b of the wafer 108 may be processed by the movement of themeniscus 116 into and away from the surface.

FIGS. 5A through 10 show exemplary proximity heads where a first fluidmeniscus is at least partially surrounded by at least a second fluidmeniscus. It should be appreciated that the first fluid meniscus and/orthe second fluid meniscus may be generated to conduct any suitable typeof substrate/wafer processing operation such as, for example,lithography, etching, plating, cleaning, and drying. The first fluidmeniscus and the second fluid meniscus may be any suitable shape or sizedepending on the substrate processing operation desired. In certainembodiments described herein, the first fluid meniscus and the secondfluid meniscus are concentric where the second fluid meniscus surroundsthe first fluid meniscus and the first fluid meniscus and the secondfluid meniscus provide a continuous fluid connection. Therefore, afterthe first fluid meniscus processes the substrate, the portion of thewafer processed by the first fluid meniscus is immediately processed bythe second fluid meniscus without a substantial amount of the contactwith the atmosphere. It should be appreciated that depending on theoperation desired, in one embodiment, the first fluid meniscus maycontact the second meniscus and in another embodiment, the first fluidmeniscus does not directly contact the second meniscus.

FIG. 5A shows a multi-menisci proximity head 106-1 in accordance withone embodiment of the present invention. The multi-menisci proximityhead 106-1 includes a plurality of source inlets 306 a that can apply afirst fluid to the wafer surface. The first fluid can then be removedfrom the wafer surface by application of vacuum through a plurality ofsource outlets 304 a. Therefore, the first fluid meniscus may begenerated by the conduits located within a first fluid meniscus region402 of the processing surface on the multi-menisci proximity head 106-1.

The multi-menisci proximity head 106-1 may also include a plurality ofsource inlets 306 b that can apply a second fluid to the wafer surface.The second fluid can then be removed from the wafer surface byapplication of vacuum through a plurality of source outlets 304 b. Inone embodiment, a portion of the second fluid is also removed by theplurality of source outlets 304 a in conjunction with the removal of thefirst fluid. In one embodiment, the plurality of source outlets 304 amay be called a one phase fluid removal conduit because the outlets 304a remove liquids applied to the wafer through the source inlets 306 aand 306 b. In addition, the plurality of source outlets 306 b may becalled a two phase removal conduit because the outlets 306 b removes thesecond fluid from the source inlets 306 b and the atmosphere outside ofthe fluid meniscus. Therefore, in one embodiment, the outlets 306 bremoves both liquid and gas while the outlets 306 a remove only liquids.As a result, the second fluid meniscus may be created by the conduitslocated within a second fluid meniscus region 404 of the processingsurface on the multi-meniscus proximity head 106-1.

Optionally, the multi-menisci proximity head 106-1 may include aplurality of source inlets 302 which can apply a third fluid to thewafer surface. In one embodiment, the third fluid may be a surfacetension reducing fluid that can reduce the surface tension of aliquid/atmosphere border of the second meniscus formed by thatapplication of the second fluid to the wafer surface.

In addition, the processing surface (e.g., the surface area of themulti-menisci proximity head where the conduits exist) of themulti-menisci proximity head 106-1 (or any other proximity headdiscussed herein) may be of any suitable topography such as, forexample, flat, raised, lowered. In one embodiment, the processingsurface of the multi-menisci 106-1 may have a substantially flatsurface.

FIG. 5B shows a cross section view of the multi-menisci proximity head106-1 in accordance with one embodiment of the present invention. Themulti-menisci proximity head 106-1 can apply the first fluid through theplurality of source inlets 306 a and remove the first fluid through theplurality of source outlets 304 a. The first fluid meniscus 116 a islocated underneath a region substantially surrounded by the plurality ofsource outlets 304 a. The multi-menisci proximity head 106-a can alsoapply the second fluid through the plurality of source inlets 306 b andremove the second fluid through the plurality of source outlets 304 a onone side of the second fluid meniscus and 304 b on the other side. Inone embodiment, the plurality of source inlets 302 may apply the thirdfluid to decrease the surface tension of the fluid making up the secondfluid meniscus 116 b. The plurality of source inlets 302 may beoptionally angled to better confine the second fluid meniscus 1116 b.

FIG. 6A illustrates a multi-menisci proximity head 106-2 in accordancewith one embodiment of the present invention. The proximity head 106-2includes, in one embodiment, a facilities plate 454 and a body 458. Itshould be appreciated the proximity head 106-2 may include any suitablenumbers and/or types of pieces as long as the first fluid meniscus andthe second fluid meniscus as described herein may be generated. In oneembodiment, the facilities plate 454 and the body 458 may be boltedtogether or in another embodiment, the plate 454 and the body 458 may beattached by an adhesive. The facilities plate 454 and the body 458 maybe made from the same material or different materials depending on theapplications and operations desired by a user.

The proximity head 106-2 may include a processing surface 458 whichincludes conduits where fluid(s) may be applied to surface of the waferand the fluid(s) maybe removed from a surface of the wafer. Theprocessing surface 458 may, in one embodiment, be elevated above asurface 453 as shown by an elevated region 452. It should be appreciatedthat the processing surface 458 does not have to be elevated and thatthe surface 458 may be substantially planar with the surface 453 of theproximity head 106-2 that faces the surface of the wafer beingprocessed.

FIG. 6B illustrates the processing surface 458 of the proximity head106-2 in accordance with one embodiment of the present invention. In oneembodiment, the processing surface 458 is a region of the proximity head106-2 which generates the fluid menisci. The processing surface 458 mayinclude any suitable number and type of conduits so the first fluidmeniscus and the second fluid meniscus may be generated. In oneembodiment, the processing surface 458 includes fluid inlets 306 a,fluid outlets 304 a, fluid inlets 306 b, fluid outlets 304 b, and fluidinlets 302.

The fluid inlets 306 a may apply a first fluid to the surface of thewafer, and the fluid inlets 306 b may apply a second fluid to thesurface of the wafer. In addition, the fluid outlets 304 a may removethe first fluid and a portion of a second fluid from the surface of thewafer by the application of vacuum, and the fluid outlets 304 b mayremove a portion of the second fluid from the surface of the wafer bythe application of vacuum, and the fluid inlets 302 may apply a fluidthat can decrease the surface tension of the second fluid. The firstfluid and/or the second fluid may be any suitable fluid that canfacilitate any one of a lithography operation, an etching operation, aplating operation, a cleaning operation, a rinsing operation, and adrying operation.

FIG. 6C shows a closer view of the processing surface 458 of themulti-meniscus proximity head 106-2 in accordance with one embodiment ofthe present invention. In one embodiment, the processing surface 458includes a first fluid meniscus region 402 which includes the fluidinlets 306 a and fluid outlets 304 a. The processing surface 458 alsoincludes a second fluid meniscus region 404 includes the fluid inlets306 b and the fluid outlets 304 b and the fluid inlets 302. Therefore,the first fluid meniscus region 402 can generate the first fluidmeniscus and the second fluid meniscus region 404 can generate thesecond fluid meniscus.

FIG. 6D shows the facilities plate 454 attaching to the body 456 to formthe multi-menisci proximity head 106-2 in accordance with one embodimentof the present invention. Channels corresponding to the fluid inlets 306a, 304 a, and 302 supply fluid from the facilities plate 454 into thebody 456 of the multi-menisci proximity head 106-2, and channelscorresponding to the fluid outlets 306 b and 304 b remove fluid from thebody 456 to the facilities 454. In one embodiment channels 506 a, 504 a,506 b, 504 b, and 502 correspond to the fluid inlets 306 a, fluidoutlets 306 b, fluid inlets 304 a, fluid outlets 304 b, and fluid inlets302.

FIG. 6E illustrates a cross section view of the proximity head 106-2 inaccordance with one embodiment of the present invention. As described inreference to FIG. 6D, channels 506 a, 506 b, and 502 may supply a firstfluid, a second fluid, and a third fluid to fluid inlets 306 a, 306 b,and 302 respectively. In addition, a channel 504 a may remove acombination of the first fluid and the second fluid from the fluidoutlets 304 a, and channel 504 b may remove combination of the secondfluid and the third fluid from the outlets 304 b. In one embodiment, thefirst fluid is a first processing fluid that can conduct any suitableoperation on a wafer surface such as, for example, etching, lithography,cleaning, rinsing, and drying. The second fluid is a second processingfluid that may or may not be the same as the first fluid. As with thefirst fluid, the second fluid may be any suitable type of processingfluid such as, for example, a fluid that can facilitate etching,lithography, cleaning, rinsing, and drying.

FIG. 7 illustrates a cross-sectional view of the multi-menisci proximityhead in exemplary wafer processing operations in accordance with oneembodiment of the present invention. Although FIG. 7 shows a top surfaceof the wafer 108 being processed, it should be appreciated by thoseskilled in the art that both a top surface and a bottom surface of thewafer 108 may be concurrently processed by any of the proximity headsdescribed herein on the top surface of the wafer 108 and by any of theproximity heads described herein on the bottom surface of the wafer 108.In one embodiment, a first wafer processing chemistry is applied to thewafer 108 through fluid inlet 306 a. After the first wafer processingchemistry has processed the wafer surface, the first wafer processingchemistry is removed from the wafer surface through the fluid outlet 304a. The first wafer processing fluid may form a first fluid meniscus 116a between the multi-menisci proximity head 106-2 and the wafer 108. Inone embodiment, a second processing fluid such as, for example,deionized water (DIW) is applied to the wafer surface through the fluidinlets 306 b.

As discussed above, the second processing fluid may be any suitablefluid that can accomplish the desired operation on the wafer surface.After the DIW has processed the wafer surface, the DIW is removed fromthe wafer surface through both the source outlets 304 a and 304 b. TheDIW between the multi-menisci proximity head 106-2 and the wafer surfacemay form a second fluid meniscus 116 b.

In one embodiment, a surface tension reducing fluid such as, forexample, isopropyl alcohol vapor in nitrogen gas may optionally beapplied from the source inlet 302 to the wafer surface to keep theliquid/gas border of the second fluid meniscus 116 b stable. In oneembodiment, the second fluid meniscus 116 b can substantially surroundthe first fluid meniscus 116 a. In this way, after the first fluidmeniscus 116 a has processed the wafer surface, the second fluidmeniscus 116 b can nearly immediately begin operating on a portion ofthe wafer surface already processed by the first fluid meniscus 116 a.Therefore, in one embodiment, the second fluid meniscus 116 b forms aconcentric ring around the first fluid meniscus 116 a. It should beappreciated that the first fluid meniscus 116 a may be any suitablegeometric shape such as, a circle, ellipse, square, rectangle,triangular, quadrilateral, etc. The second fluid meniscus 116 b can beconfigured to at least partially surround whatever shape the first fluidmeniscus 116 a may be. It should be appreciated that, as discussedabove, the first fluid meniscus 116 a and/or the second fluid meniscus116 b may utilize any suitable fluid(s) depending on the waferprocessing operation desired.

It should be appreciated that to generate a stable fluid meniscus, anamount of the first fluid inputted into the first fluid meniscus throughthe source inlets 306 a should be substantially equal to the amount ofthe first fluid removed through the source outlets 304 a. The amount ofthe second fluid inputted into the second fluid meniscus through thesource inlets 306 b should be substantially equal to the amount of thesecond fluid removed through the source outlets 304 a and 304 b. In oneembodiment, the flow rate of the fluids are determined by a distance 480the proximity head 106-2 is off of the wafer 108. It should beappreciated that the distance 480 may be any suitable distance as longas the menisci can be maintained and moved in a stable manner. In oneembodiment, the distance 480 may be between 50 microns and 5 mm, and inanother embodiment 0.5 mm to 2.5 mm. Preferably, the distance 480 isbetween about 1 mm and 1.5 mm. In one embodiment, the distance 480 isabout 1.3.

The flow rates of the fluids as shown in FIG. 7 may be any suitable flowrate that can generate the first fluid meniscus and the second fluidmeniscus that substantially surrounds the first meniscus. Depending onthe distinction desired between the first fluid meniscus and the secondfluid meniscus, the flow rates may differ. In one embodiment, sourceinlets 306 a may apply the first fluid at a flow rate of about 600cc/min, source inlets 306 b may apply the second fluid at a flow rate ofabout 900 cc/min, a source outlets 304 a may remove the first fluid andthe second fluid at a flow rate of about 1200 cc/min, and the sourceoutlets 304 b may remove the second fluid and atmosphere (which mayinclude some IPA vapor in N₂ if such a surface tension reducing fluid isbeing applied to the wafer surface) at a flow rate of about 300 cc/min.In one embodiment, the flow rate of fluids through the source outlets304 may equal 2 times the flow rate of fluid through the source inlets306 a. The flow rate of fluid through the source inlets 306 b may beequal to the flow rate through the source inlets 306 a plus 300. Itshould be appreciated by those skilled in the art that specific flowrate relationships of the source inlets 306 a, 306 b and source inlets304 a, 304 b may change depending on the configuration of the processarea and/or the configuration of the proximity heads described herein.

FIG. 8 illustrates a multi-menisci proximity head 106-4 that includesrectangular shaped menisci in accordance with one embodiment of thepresent invention. In this embodiment, the multi-menisci proximity head106-4 includes a square shaped meniscus 116 a′ surrounded by a meniscus116 c which in turn is surrounded by the outside fluid meniscus 116 b′.It should be appreciated by those skilled in the art that the menisci1116 a′, 116 c, and 116 b′ may be generated by changing the inlet/outletconfigurations as described herein. In one embodiment, the source inlets306 a, 306 c, and 306 b may be configured to apply a first fluid, asecond fluid and a third fluid to the wafer. In addition, the sourceoutlets 304 a, 304 c, and 304 b may be configured to remove (by vacuum)the first fluid and the second fluid, the second fluid and the thirdfluid, and the third fluid and atmosphere respectively. In addition,source inlets 302 may optionally be utilized to apply a surface tensionreducing fluid to an outside portion of the third fluid meniscus.

It should be appreciated by those skilled in the art that each of thefluid menisci 116 a′, 116 b′, and 116 c as described in reference toFIG. 8 may conduct any suitable operation on the wafer surface such as,for example, etching, cleaning, lithography, rinsing, drying etc.

FIG. 9 shows a multi-menisci proximity head 106-5 with oblong fluidmenisci in accordance with one embodiment of the present invention. Inone embodiment, the fluid meniscus 116 a is surrounded on both sides(length wise in one embodiment) by fluid menisci 116 c-1, 116 c-2 whichare in turn surrounded by fluid menisci 116 b-1 and 116 b-2. It shouldbe appreciated that each of the fluid menisci shown in FIG. 9 mayconduct any suitable operation on the wafer surface such as, forexample, etching, cleaning, lithography, rinsing, drying etc. It shouldalso be appreciated that the menisci shown may be generated in anysuitable method consistent with the methodology and apparatusesdescribed herein.

FIGS. 10 through 16 illustrate exemplary embodiments where the fluidinputs into the proximity heads may include flow control mechanisms thatcan vary the flow of fluid into the source inlets 306 defined in theproximity head and therefore may vary the flow of fluid from the sourceinlets to a region between the proximity head and the wafer. The flow offluid through the fluid outputs connected to the source outlets 304 ofthe proximity heads may also be controlled by using flow controlmechanisms that can vary the flow of fluid from the proximity head. Itshould be appreciated the flow control mechanism may be any suitabledevice that can vary flow of fluid. In one embodiment, the flow controlmechanism may be valve that can be turned on or off. In anotherembodiment, the valve may be have any suitable number of settings thatcan vary flow rate from none to the maximum flow available through acertain size input. The flow control mechanism may be included with eachone of the fluid inputs or a flow control mechanism may manage the flowof multiple fluid inputs.

In one embodiment, the vacuum applied through fluid outputs from theproximity head may also be varied through use of a flow controlmechanism. Consequently, at least one of the source inlets and at leastone of source inlets may have their fluid flows managed and controlled.In one embodiment, by varying the flow through each one of the sourceinlets/outlets the proximity head can be configured such that the fluidmeniscus can be formed or removed in segments at a time, or segments maybe progressively generated or removed until the desired shape or size isreached. This can be accomplished by adjusting the fluid flow of eachsource inlet/outlet corresponding to a particular meniscus segment. Inanother embodiment, both fluid input into the proximity head and thefluid output out of the proximity head may be managed in concert tocontrol fluid meniscus segments. It should also be understood that thefluid flow control mechanism for the one or more of the fluidinputs/outputs may be located in a fluid supply or removal device, suchas, for example, a fluid manifold. It should also be appreciated thatthe fluid flow control mechanism may be also be located within each oneof the source inlets/outlets.

It should be appreciated that in the side views of the proximity heads106 in the following figures, the source outlets 304 and the sourceinlets 302 are not shown to more clearly show that the fluid inputs areconnected to the source inlets 306.

FIG. 10A illustrates a side view of a proximity head 106-6 with fluidinputs in accordance with one embodiment of the present invention. Inone embodiment, each one of the plurality of source inlets 306 isconnected to corresponding ones of a plurality of fluid inputs 402. Itshould be appreciated that fluid flow input from each one or multipleones of the plurality of fluid inputs into the source inlets 306 can becontrolled independently through use of a fluid flow control device 404.In one embodiment, as shown in FIG. 10A, each one of the plurality offluid inputs can include a fluid flow control device 404. It should beappreciated that the fluid flow control device 404 may be any suitabledevice that can control fluid flow such as, for example, valve,pinch-off device, gate, plug, flow restrictor, butterfly valve, ballvalve, etc. In one embodiment, the fluid flow control device 404 may bea valve that can be turned on or off or set to any suitable partialflow. Therefore, in one embodiment, by controlling the fluid flowthrough each one of the plurality of variable flow fluid inputs 402 intorespective ones of the plurality of source inlets 306, the segments offluid meniscus controlled by the corresponding ones of the source inlets306 may be turned on or off.

It should also be understood that fluid output may also be utilizedwhere the fluid outputs may remove fluid from corresponding ones of theplurality of source outlets 304. In addition, a fluid flow controlmechanism may also control the fluid flow through the fluid outputsthereby controlling fluid removed from the meniscus through thecorresponding source outlets to which the fluid outputs are connected.

In one embodiment, when a segment of the fluid meniscus is desired to begenerated, the fluid flow control device may be opened and set so theflow rate through the source inlets 306 is between 35 to 55 milliliterper minute per inlet. The source inlets 304 may be spaced between about0.125 inch to about 0.5 inch from the source outlets 306. In addition,the source inlets 302 (if utilized) can be between about 0.625 inch toabout 0.125 inch from the source inlets 306. These parameters may beutilized for any suitable proximity head 106 described herein. It shouldbe appreciated that the process variables described above may besuitably varied depending on the wafer processing conditions and/oroperations desired.

FIG. 10B shows a face view of a processing region of the proximity head106-6 in accordance with one embodiment of the present invention. Theprocessing region is the portion of the proximity head 106-6 where, inoperation, the conduits of the proximity head 106-6 generate a fluidmeniscus on a wafer surface. The processing region of the proximity head106-6 may include a plurality of conduits which may be the source inlets302 and 306 and the source outlets 304. In one embodiment, processingregion includes regions 440, 442, and 444. A region where the pluralityof source inlets 306 is located is shown by region 444. The plurality ofsource inlets 306 may be surrounded by region 442 which includes theplurality of source outlets 304. The plurality of source outlets 304 maybe partially surrounded by or adjacent to a region 440 which may includethe plurality of source outlets 302. As discussed above, the pluralityof source inlets 306 may apply the processing fluid to the regionbetween the face of the proximity head 106-6 and the wafer 108. Theplurality of source outlets 304 may remove a portion of the fluid makingup the meniscus from the region between the face of the proximity head106-6 and the wafer 108. In one embodiment, each one of the plurality ofsource inlets 306 may receive fluid from respective ones of theplurality of fluid inputs 402. It should be appreciated that the conduitpattern illustrated in FIG. 10B is only exemplary in nature and that anysuitable conduit pattern that can generate a fluid meniscus may beutilized with the fluid inputs 402 as long as one or multiple ones ofthe conduits may have individually controlled fluid flow controlled bythe fluid flow control mechanism.

FIG. 10C illustrates the proximity head 106-6 showing regions 448, 450,452, 454, 456, 458, 460, 462, 464, 466, 468, 470, and 472 with theconduits that form segments of the meniscus formed by the proximity head106-6 during operation in accordance with one embodiment of the presentinvention. In one embodiment, each of the source inlet 306, the sourceoutlets 304, and the source inlets 302 within each of the regions 448,450, 452, 454, 456, 458, 460, 462, 464, 466, 468, 470, and 472 may beseparately managed. In this way fluid flow into and out of each of theregions 448, 450, 452, 454, 456, 458, 460, 462, 464, 466, 468, 470, and472 can be individually turned on or off thereby generating or removingthe segment of the fluid meniscus corresponding to the regions 448, 450,452, 454, 456, 458, 460, 462, 464, 466, 468, 470, and 472. It shouldalso be appreciated that the segment of the fluid meniscus may begenerated by a group of inlets (more than one) and groups of outlets(more than one). In addition, the groups of inlets may havecorresponding fluid inputs, and the groups of outlets may havecorresponding fluid outputs.

FIG. 10D shows a macroscopic view of a wafer processing system inaccordance with one embodiment of the present invention. In oneembodiment, the system includes a proximity head 106-6 that may processthe wafer 108 by application of the fluid meniscus 116. The proximityhead 106-6 may include source inlets for applying a fluid making of thefluid meniscus 116 and source outlets for removing the fluid from thefluid meniscus 116. The proximity head 106-6 may be attached to aplurality of fluid inputs 402 and a plurality of fluid outputs 406. Eachone of the plurality of fluid inputs 402 may have a fluid flow controldevice 404 and each one of the plurality of fluid outputs 406 may have afluid flow control device 404. Each one of the plurality of fluid inputs402 is connected to corresponding ones of the source inlets and each oneof the plurality of fluid outputs 406 is connected to the correspondingones of the source outlets. By allowing fluid flow or stopping fluidflow through the plurality of fluid inputs 402 and the plurality offluid outputs 406 respectively, the fluid flow control devices 404 canmanage the generation or removal of a segment of the fluid meniscus 116.In one embodiment, when a segment of the fluid meniscus 116 is to begenerated, the fluid input corresponding to the source inlet supplyingfluid to the segment of the fluid meniscus 116 is opened to fluid flowby the fluid flow control device 404 for that particular fluid input. Atsubstantially the same time, the fluid input corresponding to the sourceoutlet removing fluid from the segment of the fluid meniscus 116 isopened to fluid flow by the fluid flow control device 404 for thatparticular fluid output. Therefore through independent management offluid flow through each of the fluid inputs and fluid outputs, segmentsof the fluid meniscus 114 may be generated and removed.

The system may also include a fluid supply 422 which may be coupled tothe fluid inputs 402 and the fluid outputs 406. The fluid supply 422 maybe any suitable device that can supply fluid to the fluid inputs 402 andremove fluid from the fluid outputs 406. In one embodiment, the fluidsupply 422 may be a manifold that can manage fluid flow into each one ofthe inputs 402 and manage flow out of each one of the outputs 406. Inanother embodiment, the fluid supply 422 may control the flow rate andthe fluid flow control mechanisms may located inside of the fluid supply422.

FIG. 11A shows a proximity head 106 being supplied with fluid from theplurality of fluid inputs 402 in accordance with one embodiment of thepresent invention. In one embodiment, the proximity head is connected tothe plurality of fluid inputs 402 such that segments of the meniscus 116may be generated or removed depending on the number of meniscus(es)and/or shape of meniscus(es) desired. Segments of the meniscus 116 maybe individual portions of the meniscus 116 that is formed by aparticular one or ones of the plurality of source inlets 306. Inaddition, each of the segments of the meniscus 116 may also be managedby a particular one or ones of the plurality of source outlets 304. Inone embodiment, fluid flows in certain ones of the plurality of sourceinlets 306 and certain ones of the plurality of source outlets 304 maybe associated so when one source inlet 306 stops applying fluid to thewafer surface, a corresponding source outlet 304 stops removing fluidfrom the wafer surface. In the exemplary fluid meniscus generationoperation shown in FIG. 11A, all of the plurality of fluid flow controldevices 404 are turned on and therefore all of the plurality of sourceinlets 306 are supplied with fluid. Consequently, the maximum size fluidmeniscus that can be generated by the embodiment of the proximity head106 shown in FIG. 1A is portrayed as being formed on the wafer 108.

FIG. 11B shows a fluid meniscus 116 that has been formed on the wafer108 by the proximity head 106-6 of FIG. 11A in accordance with oneembodiment of the present invention. It should be appreciated that thesize and/or shape of the meniscus can be determined in any suitablenumber of ways. In one embodiment, the meniscus 116 may extend beyond aradius of the wafer 108. By turning on or off certain fluid inputssupplying corresponding source inlets 306, certain segments of themeniscus 116 may be generated or removed. Therefore, in one embodiment,without moving the proximity head 106-6, the fluid meniscus 116 may beshortened or extended as shown by the bidirectional arrow 416 dependingon which of the source inlets is supplied with fluid (and also dependingon which of the source outlets is supplied with vacuum to remove fluid).When the fluid meniscus 116 extends slight beyond the radius of thewafer 108 as shown in FIG. 11B, the wafer 108 may be scanned under theproximity head. In another embodiment, the proximity head may form themeniscus 116 on the wafer surface and scan the fluid meniscus 116 overthe wafer. In yet another embodiment, the proximity head 106 may cover aregion larger than the wafer in which by using selected meniscusgeneration in different parts of the wafer, all of the wafer surface maybe processed without movement of the proximity head 106 or the wafer.

FIG. 11C shows the proximity head 106-6 in operation where a portion ofthe plurality of variable flow fluid inputs are turned on in accordancewith one embodiment of the present invention. A portion 482 of theplurality of fluid inputs are shown as being open due to the fluid flowcontrol device 404 being set to allow fluid flow through the portion 484of the plurality of variable flow fluid inputs. A portion 484 of theplurality of variable flow fluid inputs are shown as being closed due tothe fluid flow control device 404 being set to stop fluid flow throughthe portion 482 of the plurality of variable flow fluid inputs.Therefore, the corresponding ones of the plurality of source inlets 306fed by the portion 484 of the plurality of variable flow fluid inputsapply fluid to the region between the wafer 108 and the proximity head106-6. The application of fluid to the wafer forms the fluid meniscus116. In contrast, the portion 484 of the plurality of variable flowfluid inputs do not supply fluid into the corresponding ones of theplurality of source inlets 306 because the fluid flow control device 404is turned off.

In addition, fluid outputs from the proximity head 106 corresponding tothe source inlets may manage fluid flow out of the source inlets definedwithin the proximity head 106. Therefore, the amount of fluid removedthrough a particular one or ones of the source outlets may be managed.Therefore, when particular segment of the meniscus is desired to begenerated, the corresponding source inlet(s) 306 and the correspondingsource outlet(s) 304 (not shown in FIG. 11C) may be activated byenabling fluid flow through the fluid input(s) and output(s) associatedwith the corresponding source inlet(s) 306 and the corresponding sourceoutlet(s) 304.

FIG. 11D illustrates the meniscus 116 that is formed by the proximityhead 106-6 with the configuration of the variable flow fluid inputs 402as shown in FIG. 11C in accordance with one embodiment of the presentinvention. The meniscus 116 may be extended or contracted as shown bybidirectional arrow 490. This can be accomplished by turning on and offthe fluid flow through the fluid inputs into certain ones of theplurality of source inlets 306. In addition, the fluid flow through thefluid outputs into corresponding ones of the plurality of source outlets304 may be turned on or off. When one or more segments of the fluidmeniscus are desired to be generated, the flow of fluid may be generatedthrough the source inlet(s) 306 and the source outlet(s) 304. When thefluid flow into a particular source inlet is turned on, the meniscussegment supplied by the particular source inlet is formed. Conversely,when the fluid flow into the particular source inlet is turned off, themeniscus segment supplied by the particular source inlet is removed. Inone embodiment, the fluid flow out of a particular source outlet is onwhen fluid flow into a corresponding source inlet is on therebygenerating the segment of the meniscus, and the fluid flow out of theparticular source outlet is off when the fluid flow into thecorresponding source inlet is off thereby removing the segment of themeniscus. Optionally, source inlets 302 may apply IPA/N₂ vapor to theborder of the fluid meniscus generated on the wafer surface. The fluidinputs for the source outlets 302 may be shut off when the correspondingsource inlets 306 and source outlets 304 are shut off thereby turningoff the particular fluid meniscus segment. In addition, the fluid inputsfor the source outlets 302 maybe turned on when the corresponding sourceinlets 306 and source outlets 304 are turned on thereby generating theparticular meniscus segment.

FIG. 11E illustrates the proximity head 106-6 as discussed in FIG. 11Din operation where the region 484 shows fluid inputs which have theirrespective fluid flow control devices 404 turned off and the regionshows fluid input which have their respective fluid flow control devices404 turned on in accordance with one embodiment of the presentinvention. In one embodiment, the region 484 includes fluid inputs 402each of which corresponds to a segment of meniscus that can be formed.The fluid inputs 402 in the region 482 apply fluid flow into theproximity head 106 corresponding to the source inlets. Each of thesource inlets supplied by the fluid inputs 402 can generate a fluidmeniscus segment. As shown in FIG. 11E, the segments of the fluidmeniscus 116 formed on the wafer 108 correspond to the source inletsthat have a positive supply of fluid from the fluid inputs 402 in theregion 482. Therefore, by turning any suitable one of the fluid flowcontrol devices 404, any suitable corresponding fluid meniscus segmentmay be generated due to the application of fluid to the wafer by thecorresponding source inlets. As discussed above, the fluid removal fromthe meniscus through the source outlet 304 corresponding to the segmentof the meniscus to be managed may be controlled by adjusting the flowthrough the fluid output connected to the proximity head.

FIG. 11F shows the proximity head 106-6 in operation illustrating thegeneration of another exemplary meniscus in accordance with oneembodiment of the present invention. In the exemplary embodiment shownin FIG. 11F, the fluid inputs 402 in the regions 482 have fluid flowcontrol devices 404 that are allowing fluid flow into corresponding onesof the plurality of source inlets of the proximity head 106 therebyleading to the generation of the menisci 116 a and 116 b. In addition,the fluid removal from the meniscus through the source outlet 304corresponding to the segment of the meniscus to be managed may becontrolled by adjusting the flow through the fluid output connected tothe proximity head.

FIG. 11G illustrates the proximity head 106-6 where no meniscus isformed in accordance with one embodiment of the present invention. Inone exemplary operation of the proximity head 106-6, the fluid flowcontrol devices 404 are all in the off position. Therefore, no fluid iscommunicated into the corresponding source inlets of the proximity head106-6 thereby generating no meniscus because none of the fluid meniscussegments are being fed fluid. In this embodiment, the fluid output fromthe proximity head 106 may be turned off by stopping fluid flow throughthe fluid flow control devices 404. Top view 430 shows that no meniscusis formed on the wafer.

FIG. 11H shows a fluid meniscus 116 that has been formed on the wafer108 in accordance with one embodiment of the present invention. In thisembodiment, a proximity head that is longer than a diameter of the waferis utilized to generate the fluid meniscus 116. It should be appreciatedthat the size and/or shape of the meniscus can be determined in anysuitable number of ways. In one embodiment, the meniscus 116 may extendbeyond a diameter of the wafer 108. By turning on or off certain fluidinputs supplying corresponding source inlets 306, certain segments ofthe meniscus 116 may be generated or removed. Therefore, in oneembodiment, without moving the proximity head 106-6, the fluid meniscus116 may be shortened or extended as shown by the bidirectional arrow 416depending on which of the source inlets is supplied with fluid (and alsodepending on which of the source outlets is supplied with vacuum toremove fluid). When the fluid meniscus 116 extends slightly beyond thediameter of the wafer 108 as shown in FIG. 11H, the wafer 108 may bescanned under the proximity head. In another embodiment, the proximitymay form the meniscus 116 on the wafer surface and scan the fluidmeniscus 116 over the wafer. In yet another embodiment, the wafer 108may be rotated one 180 degree rotation which can process the entirewafer surface. In yet another embodiment, the proximity head 106 maycover a region larger than the wafer in which by using selected meniscusgeneration in different parts of the wafer, all of the wafer surface maybe processed without movement of the proximity head 106 or the wafer.

FIG. 12A shows a proximity head 106-6 producing multiple types ofmenisci in accordance with one embodiment of the present invention. Inone embodiment, the fluid flow control device 404 may be a multiplefluid valve which can turn fluid flow off, allow a first fluid to flowthrough the fluid input 402, or allow a second fluid to flow through thefluid input 402. By using the multiple fluid valve, a first fluid may beinputted into the proximity head 106-6 where the corresponding sourceinlets of the proximity head 106 can apply the first fluid to theproximity head to generate a first fluid meniscus 116 a made up of thefirst fluid. By intelligently managing the multiple fluid valve, after adesired amount of wafer processing has been done by the first fluidmeniscus 116 a, the multiple fluid valve may allow a second fluid toflow into the corresponding source inlet of the proximity head 106-6.The same source inlets that were applying the first fluid to the wafercan later apply the second fluid to the wafer. As a result, a secondfluid meniscus 116 b can be formed on the wafer 108. As shown next inFIG. 12B, more of the fluid flow control devices 404 may be managed toallow the second fluid into more of the corresponding source inlets ofthe proximity head 106-6. Therefore, as more and more of the sourceinlets apply the second fluid, the second fluid meniscus 116 b maybecome larger. In one exemplary embodiment as shown in FIG. 12A, themeniscus 116 b can extend left and the fluid meniscus 116 a becomessmaller. In one-embodiment, the fluid meniscus 116 a may be a chemicalmeniscus that processes the wafer 108 while the fluid meniscus 116 b isa rinse meniscus. Therefore, when a particular segment of the fluidmeniscus 116 a has processed a corresponding portion of the wafer 108then that segment of the fluid meniscus can be changed to a segment ofthe fluid meniscus 116 b to rinse the portion of the wafer that waspreviously processing by a segment the fluid meniscus 116 a.

Top view 431 shows one embodiment of how dual menisci processing may beaccomplished. The top view 431 shows that the meniscus 116 a is withinthe meniscus 116 b and therefore as the meniscus 116 a is made smallerby switching flow into corresponding fluid inputs from the first fluidin the meniscus 116 a to the second fluid in the meniscus 116 b. As themeniscus 116 a becomes progressively smaller with each progressive fluidinput switching to the second fluid, the meniscus 116 b becomesprogressively larger and replaces the segments of the 116 a that isremoved.

FIG. 12B shows a proximity head 106-6 where more of the fluid flowcontrol devices 404′ allows the second fluid to flow instead of thefirst fluid in accordance with one embodiment of the present invention.As more and more of the source inlets are supplied with the second fluidinstead of the first fluid by the corresponding fluid inputs, moresegments of the fluid meniscus 116′ are changed to the second fluidmeniscus 116 b.

Top view 432 shows one embodiment of how dual menisci processing may beaccomplished. The top view 432 shows that the meniscus 116 a is withinthe meniscus 116 b and therefore as the meniscus 116 a is made smallerby switching flow into corresponding fluid inputs from the first fluidin the meniscus 116 a to the second fluid in the meniscus 116 b. As themeniscus 116 a becomes progressively smaller with each progressive fluidinput switching to the second fluid, the meniscus 116 b becomesprogressively larger and replaces the segments of the 116 a that isremoved.

FIG. 13A shows a top view of a multi-menisci proximity head 106-6 inaccordance with one embodiment of the present invention. In thisembodiment, the first fluid meniscus 116 a is defined included withinthe second fluid meniscus 116 b. In one embodiment, the first fluidmeniscus is a chemical fluid meniscus that can process the wafer inaccordance with any suitable wafer processing operation. The secondfluid meniscus 116 b in one embodiment, may be a rinse fluid meniscusthat applies DIW to the wafer to rinse the remnants of the first fluidmeniscus 116 a from the wafer surface. In one embodiment, by controllingthe different segments of the fluid meniscus and determining whichprocessing fluid makes up the segments of the fluid meniscus, differenttypes of wafer processing may be conducted.

In one embodiment, after the first fluid meniscus 116 a has been appliedto the wafer for a desired period of time, the segments of the firstfluid meniscus may be changed to segments of the second fluid meniscus.Therefore, as time progresses, the region of the wafer covered by thesecond fluid meniscus 116 b may increase and the region of the wafercovered by the first fluid meniscus 116 a may decrease. Once again, thismay be accomplished by managing the fluid flow control device tocommunicate first fluid to the source inlets of the proximity head 106-6that corresponds to the fluid meniscus segment where wafer processing isdesired. The fluid flow control device may also be managed tocommunicate the second fluid to the source inlets of the proximity head106 that corresponds to the fluid meniscus segment where a differentwafer processing operation (such as, for example, rinsing) is desired onthe corresponding portion of the wafer. View perspective 600 illustratesthe perspective from which FIG. 13C is shown.

FIG. 13B shows a side view of the dual proximity heads 106 a and 106 bthat are processing a top surface and a bottom surface of the wafer 108in accordance with one embodiment of the present invention. In thisembodiment, the proximity head 106 a and 106 b may be the proximity head106-6 described above in referenced in FIG. 13A with the capability toprocess portions of the wafer 108 by generating and removing segments ofthe fluid meniscus 116 on and from the wafer surface. In one embodiment,the adjacent segments of the fluid meniscus 116 be progressivelygenerated to create a growing meniscus or conversely the fluid meniscus116 may be progressively removed to create a shrinking meniscus. Thismay be accomplished by progressively turning on fluid flow in eachsuccessive adjacent fluid input or by progressively turning off fluidflow in each successive adjacent fluid input.

FIG. 13C shows the viewpoint 600 of a side view of a width of theproximity head as shown in FIG. 13A in accordance with one embodiment ofthe present invention. In one embodiment, the fluid flow control device404′ is a three way valve that is configured to be capable of allowingno fluid through the fluid input or allowing one of two fluids into thefluid input supplying the source inlet 306 a. In one embodiment, thethree-way valve can allow either of a chemical or DIW through the fluidinput. The chemical may be any suitable solution that may process thewafer in a desired operation. The proximity head 106 can include any oneof the suitable the conduit patterns as discussed above in reference tothe multi-menisci proximity heads. Therefore, the source inlet 306 a canapply a first fluid to the wafer and therefore generate the fluidmeniscus 116 a. The first fluid may be removed from the wafer surfacethrough the source outlets 304 a. The source inlet 306 b can apply asecond fluid to the wafer and therefore generate the fluid meniscus 116b that is concentric to the fluid meniscus 116 a. The second fluid maybe removed from the wafer surface through the source outlets 304 b.Source inlet 302 may optionally be used to apply a surface tensionreducing fluid when control of surface tension of the border of thefluid meniscus 116 a is desired. In addition to fluid inputs supplyingthe source inlets 306 a may also include the fluid flow control device404 for fluid supply control. The fluid outputs removing fluid from thesource outlets 304 a and 304 b may also include the fluid flow controldevices 404 for fluid removal control.

FIG. 14A shows a proximity head 106-7 that is capable of generating asubstantially circular fluid meniscus in accordance with one embodimentof the present invention. In one embodiment, the proximity head 106-7having concentric regions 504. Each of the concentric regions 504 of theproximity head 106-7 can generate a segment of a fluid meniscus. Each ofthe concentric regions includes a concentric plurality of source inlets302, a concentric plurality of source inlets 306, and a concentricplurality of source outlets 304 (as shown in FIG. 14B). Therefore, eachof the regions 504 can generate a circular fluid meniscus on the wafersurface corresponding to the shape and size of the regions 504.

FIG. 14B shows a side perspective view along a radius of the circularregions 504 in the proximity head 106-7 operating on an underside of thewafer 108 in accordance with one embodiment of the present invention. Inone embodiment, the proximity head 106′″ includes a plurality of regions504 each of which can generate a fluid meniscus. The side view of theproximity head 106-7 shows that along a radius of the regions 504 (asseen in FIG. 14A), each of the regions include a source inlet 306,adjacent to source inlets 302 which are in turn adjacent to sourceoutlets 304. In one embodiment, the source inlet 306 can apply aprocessing fluid to the wafer. The source inlets 302 may apply a surfacetension reducing fluid to the processing fluid applied to the wafer bythe source inlet 306. The source outlets 304 may remove the fluidapplied to the wafer surface by the source inlet 306. By the applicationof the processing fluid to the wafer, the application of a surfacetension reducing fluid to the fluid on the wafer, and the removal of thefluid from the surface of the wafer, a stable fluid meniscus may begenerated.

Fluid inputs that supply the source inlets 306 may include the fluidflow control device that can control the flow of fluid through the fluidinputs thereby controlling the flow of fluid through the source inlets306. Fluid outputs (as shown in FIG. 10D) that remove the fluid from thesource outlets 304 can include the fluid flow control device that cancontrol the flow of fluid through the fluid outputs thereby controllingthe flow of fluid through the source outlets 304.

FIG. 14C illustrates an analogous structure as shown in FIG. 14B that isin position to process a top surface of the wafer 108 in accordance withone embodiment of the present invention. In this embodiment, theproximity head 106-7 is located below the wafer 108 and the proximityhead 106-7 can process the bottom surface of the wafer 108 in accordancewith the methodologies described herein.

FIG. 15 illustrates management of concentric fluid menisci in accordancewith one embodiment of the present invention. In one embodiment, each ofthe concentric regions of the proximity head 106-7 that has the sourceinlets 306 may be supplied with fluid from the fluid inputs 402. Thefluid flow control device 404 for each of the fluid inputs 402 may beopen or closed depending on whether a corresponding source inlet 306 isdesired to be supplied with fluid. When the source inlet 306 is suppliedwith fluid from the fluid input 402, the source inlet 306 applies thefluid to the wafer surface in a region between the source inlet 306 andthe wafer surface.

In the exemplary embodiment shown in FIG. 15, the fluid inputs 404within the region 482 are open which in turn generates fluid meniscisegments 700. The fluid inputs 404 within the region 484 are closedwhich in turn does not generate fluid menisci segments 710. Therefore,in the fluid meniscus pattern shown in FIG. 15 is similar to a ring.

While this invention has been described in terms of several preferredembodiments, it will be appreciated that those skilled in the art uponreading the preceding specifications and studying the drawings willrealize various alterations, additions, permutations and equivalentsthereof. It is therefore intended that the present invention includesall such alterations, additions, permutations, and equivalents as fallwithin the true spirit and scope of the invention.

1. A method for processing a substrate, comprising: applying fluid ontoa surface of the substrate from a portion of a plurality of inlets; andremoving at least the fluid from the surface of the substrate, theremoving being processed as the fluid is applied to the surface; whereinthe applying the fluid and the removing the fluid form a segment of afluid meniscus on the surface of the substrate.
 2. A method forprocessing a substrate as recited in claim 1, further comprising:processing the surface of the substrate with the segment of the fluidmeniscus.
 3. A method for processing a substrate as recited in claim 2,wherein processing the surface of the substrate with the segment of thefluid meniscus includes one of an etching operation, a cleaningoperation, a rinsing operation, a plating operation, a drying operation,or a lithography operation.
 4. A method for processing a substrate asrecited in claim 1, further comprising: generating additional segmentsof the fluid meniscus.
 5. A method for processing a substrate as recitedin claim 4, wherein the generating additional segments of the fluidmeniscus includes, applying an additional fluid onto a surface of thesubstrate from a different portion of a plurality of inlets; andremoving at least the additional fluid from the surface of thesubstrate, the removing being processed as the additional fluid isapplied to the surface.
 6. A method for processing a substrate asrecited in claim 1, wherein the fluid is one of a lithographic fluid, anetching fluid, a plating fluid, a cleaning fluid, a drying fluid, or arinsing fluid.
 7. A method for processing a substrate as recited inclaim 1, further comprising, applying a surface tension reducing fluidto the surface of the substrate.
 8. A method for processing a substrateas recited in claim 7, wherein the surface tension reducing fluid is anisopropyl alcohol vapor in nitrogen gas.
 9. A method for processing asubstrate as recited in claim 1, wherein the application of the fluidonto the surface of the substrate from at least one inlet is managed bya fluid flow control device.
 10. A method for processing a substrate asrecited in claim 9, wherein the fluid flow control device is configuredto be in one of an on position or an off position, the on positionallowing fluid flow into at least one corresponding inlet, and the offposition stopping fluid flow into the at least one corresponding inlet.11. A method for processing a substrate as recited in claim 1, whereinthe removal of the fluid from the surface of the substrate is from aportion of a plurality of outlets wherein the removal of the fluid fromeach one of the plurality of outlets is managed by a fluid flow controldevice.
 12. A method for processing a substrate as recited in claim 11,wherein the fluid flow control device is configured to be in one of anon position or an off position, the on position allowing fluid flow outof at least one corresponding outlet, and the off position stoppingfluid flow from the at least one corresponding outlet.
 13. A method forprocessing a substrate as recited in claim 1, wherein the portion of theplurality of inlets is a group of inlets, the group of inlets includingat least one inlet for applying the fluid and at least one inlet forapplying a surface tension changing fluid, flow through the portion ofthe plurality of inlets being managed by a fluid flow control device.14. A method for processing a substrate as recited in claim 1, whereinthe removal of the fluid from the surface of the substrate is from agroup of outlets, a flow through the group of outlets being controlledby a fluid flow control device.
 15. An apparatus for processing asubstrate, comprising: a proximity head having a plurality of conduits;a fluid input coupled to the proximity head and configured to supplyfluid to a corresponding one of a plurality of conduits, thecorresponding one of the plurality of conduits being configured to usethe fluid to generate a segment of a fluid meniscus on a surface of thesubstrate; and a fluid flow control device for managing fluid flowthrough the fluid input.
 16. An apparatus for processing a substrate asrecited in claim 15, wherein the plurality of conduits includes, atleast one inlet for applying the fluid to the surface of the substrate,and at least one outlet for removing at least the fluid from the surfaceof the substrate.
 17. An apparatus for processing a substrate as recitedin claim 16, wherein the plurality of conduits further includes, atleast one inlet for applying a third fluid to the surface of the wafer.18. An apparatus for processing a substrate as recited in claim 15,wherein the segment of the fluid meniscus is capable of executing one ofan etching operation, a cleaning operation, a rinsing operation, aplating operation, drying operation, or a lithography operation.
 19. Anapparatus for processing a substrate as recited in claim 17, wherein thethird fluid changes a surface tension of the second fluid.
 20. Anapparatus for processing a substrate as recited in claim 15, wherein thefluid flow control device is one of a valve, a flow restrictor, or aplug.
 21. An apparatus for processing a substrate as recited in claim20, wherein the valve facilitates a flow of at least one fluid throughthe fluid input.
 22. An apparatus for processing a substrate as recitedin claim 15, further comprising, a fluid output configured to removefluid from a corresponding at least one outlet, the corresponding atleast one outlet being configured to remove the fluid from the segmentof the fluid meniscus on the surface of the substrate, and a fluid flowcontrol device for managing fluid flow through the fluid output.
 23. Anapparatus for processing a substrate as recited in claim 22, wherein thea fluid flow control device for managing fluid flow through the fluidoutput is one of a valve, a flow restrictor, or a plug.
 24. An apparatusfor processing a substrate as recited in claim 23, wherein the valvefacilitates a flow of at least one fluid through the fluid output.
 25. Asystem for processing a substrate, comprising: a proximity headconfigured to generate at least one segment of a fluid meniscus; a fluidinput coupled to the proximity head, the fluid input configured toprovide fluid to the proximity head; and a fluid supply coupled to thefluid input, the fluid supply configured to supply the fluid to thefluid input.
 26. A system for processing a substrate as recited in claim25, wherein the fluid input includes a fluid flow control deviceconfigured to manage fluid transport to the proximity head.
 27. A systemfor processing a substrate as recited in claim 25, wherein the fluidsupply includes a fluid flow control device configured to manage fluidtransport to the proximity head.
 28. A system for processing a substrateas recited in claim 25, further comprising, a fluid output coupled tothe proximity head, the fluid output configured to remove fluid from theproximity head; and a fluid supply coupled to the fluid output, thefluid supply configured to remove the fluid from the fluid output.
 29. Asystem for processing a substrate as recited in claim 28, wherein thefluid output includes a fluid flow control device configured to managefluid transport from the proximity head.
 30. A system for processing asubstrate as recited in claim 28, wherein the fluid supply includes afluid flow control device configured to manage fluid transport from theproximity head.